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The temperature dependent thermal conductivity of In–Sb–Te thin films has been measured by modulated photothermal radiometry in the 20–550 °C range for samples with different Te content. Significant changes with temperature are observed and ascribed to a sequence of structural transformations on the basis of in‐situ Raman spectra. The data suggest that the as‐deposited material consisting of a mixture of polycrystalline InSb0.8Te0.2and amorphous Te first undergoes a progressive crystallization of the amorphous part, mostly above 300 °C. Further increase in temperature above 460 °C leads, for higher Te content in the alloy, to the formation of crystalline In3SbTe2, intertwined with a less conductive compound, possibly InTe and/or InSb. Upon cooling to room temperature, the initial polycrystalline InSb0.8Te0.2phase is mostly recovered along with other compounds, with a slightly higher thermal conductivity …
WILEY‐VCH Verlag Berlin GmbH
Publication date: 
1 Jul 2016

J‐L Battaglia, A Kusiak, C Gaborieau, Y Anguy, HT Nguyen, C Wiemer, R Fallica, D Campi, M Bernasconi, M Longo

Biblio References: 
Volume: 10 Issue: 7 Pages: 544-548
physica status solidi (RRL)–Rapid Research Letters