-A A +A
Activation and compensation ratios feature the electrical doping efficiency of a semiconductor material by ion implantation. The estimation of these ratios requires a quantitative evaluation of the density of the implanted dopant in substitutional position and of the density of the compensator centers after the mandatory post implantation annealing treatment. In the case of Al+ ion implanted 4H-SiC, it is a common habit to determine acceptor density, compensator density and acceptor thermal ionization energy by fitting the curve of the drift holes temperature dependence with the charge neutrality equation. However, this strategy could lead to ambiguous results. In fact, this study shows several cases of Al+ ion implanted 4H-SiC of interest for electronic device fabrication, where at least two sets of such fitting outputs can reproduce the same experimental curve within the uncertainty of the data. Provided that a model for the …
Trans Tech Publications Ltd
Publication date: 
1 Jan 2022

Roberta Nipoti, Virginia Boldrini, Mariaconcetta Canino, Fabrizio Tamarri, Salvatore Vantaggio, Antonella Parisini

Biblio References: 
Volume: 1062 Pages: 241-245
Materials Science Forum