-A A +A
Antimony telluride (Sb2Te3) thin films were prepared by a room temperature Metal–Organic Chemical Vapor Deposition (MOCVD) process using antimony chloride (SbCl3) and bis(trimethylsilyl)telluride (Te(SiMe3)2) as precursors. Pre-growth and post-growth treatments were found to be pivotal in favoring out-of-plane and in-plane alignment of the crystallites composing the films. A comprehensive suite of characterization techniques were used to evaluate their composition, surface roughness, as well as to assess their morphology, crystallinity, and structural features, revealing that a quick post-growth annealing triggers the formation of epitaxial-quality Sb2Te3 films on Si(111).
Royal Society of Chemistry
Publication date: 
1 Jan 2020

Martino Rimoldi, Raimondo Cecchini, Claudia Wiemer, Alessio Lamperti, Emanuele Longo, Lucia Nasi, Laura Lazzarini, Roberto Mantovan, Massimo Longo

Biblio References: 
Volume: 10 Issue: 34 Pages: 19936-19942
RSC Advances