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In this paper, we report on the observation of stimulated Raman scattering in amorphous silicon nanocrystals embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs). In particular, we have experimentally demonstrated amplification of Stokes signal up to 0.9dB∕cm at 1540.6nm using a 1427nm continuous-wavelength pump laser, consistent with a preliminary valuation of approximately a fourfold enhancement of the gain coefficient in Raman amplifier based on SRN/Si-SLs with respect to silicon. Finally, a significant reduction in threshold power of about 40% is also reported. Our findings indicate that silicon nanocrystals embedded in Si nitride-based superlattice structures show great promise for Si-based Raman lasers.
American Institute of Physics
Publication date: 
22 Dec 2008

L Sirleto, MA Ferrara, Ivo Rendina, SN Basu, J Warga, R Li, L Dal Negro

Biblio References: 
Volume: 93 Issue: 25 Pages: 251104
Applied Physics Letters