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Electrical transport properties of undoped and n-type doped InN nanowires grown by molecular beam epitaxy were studied by current–voltage and back-gate field-effect transistor measurements. The current–voltage characteristics show ohmic behavior in the temperature range between 4 and 300 K. Down to about 120 K a linear decrease in resistance with temperature is observed. The investigation of a large number of nanowires revealed for undoped as well as doped wires an approximately linear relation between the normalized conductance and diameter for wires with a diameter below 100 nm. This shows that the main conduction takes place in the tubular surface accumulation layer of the wires. In contrast, for doped wires with a diameter larger than 100 nm a quadratic dependence of conduction on the diameter was found, which is attributed to bulk conductance as the main contribution. The successful …
IOP Publishing
Publication date: 
8 Sep 2009

Th Richter, H Lüth, Th Schäpers, R Meijers, K Jeganathan, S Estevez Hernandez, R Calarco, M Marso

Biblio References: 
Volume: 20 Issue: 40 Pages: 405206