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The electrical characteristics of MOSFETs fabricated on 4H-SiC with a process based on N implantation in the channel region before the growth of the gate oxide are reported as a function of the N concentration at the SiO2/SiC interface up to 6 1019 cm-3. The field effect mobility improves with increasing N concentration. At room temperature values change from 4 cm2/Vs for the not implanted sample up to 42 cm2/Vs for the sample with the highest N concentration. Furthermore, the field effect mobility increases with temperature and presents values above 60 cm2/Vs at 200 C. The MOSFETs with the better electrical characteristics (higher mobility, lower threshold voltage, lower subthreshold swing) were fabricated by a low thermal budget oxidation process, thank to the use of a high N implantation dose able to produce an amorphous SiC surface layer. A strong correlation among the increasing of the N …
Trans Tech Publications Ltd
Publication date: 
1 Jan 2009

Antonella Poggi, Francesco Moscatelli, Sandro Solmi, Roberta Nipoti, Fabrizio Tamarri, G Pizzochero

Biblio References: 
Volume: 615 Pages: 761-764
Materials Science Forum