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The role of the silanization of silicon oxide (SiOx) with different alkyl-silane molecules, in determining the morphology and structure of the overlying poly(3-hexylthiophene) (P3HT) layer has been studied by atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. Particular attention has been paid to the first thin layers close to the interface P3HT/SiOx. For each case the effect of the annealing temperature has been studied.For all the considered silanizations XRD investigations on the P3HT layers, 5–20 nm thick, reveal an edge-on configuration of the thiophene rings. However, a strong morphology dependence has been observed on the length and polarity of the silanizer. By using silanizer with substituents of short length (dimethyldichlorosilane (DMDS) and hexamethyldisilazane (HDMS)) and of significant polarity (3-aminopropyl-trietoxysilane (APS)), P3HT layer organizes into filaments where the …
Publication date: 
1 Oct 2008

Guido Scavia, William Porzio, Silvia Destri, Luisa Barba, Gianmichele Arrighetti, Silvia Milita, Luca Fumagalli, Dario Natali, Marco Sampietro

Biblio References: 
Volume: 602 Issue: 19 Pages: 3106-3115
Surface science