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The pile-up of arsenic at the Si/SiO{sub 2} interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy (EELS), grazing incidence x-ray fluorescence spectroscopy (GI-XRF), secondary ion mass spectrometry, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, as well as Hall mobility and four-point probe resistivity measurements. After properly taking into account their respective artifacts, the results of all methods are compatible with each other, with EELS and GI-XRF combined with etching providing similar spatial resolution on the nanometer scale for the dopant profile. The sheet concentration of the piled-up As at the interface was found to be {approx}1x10{sup 15} cm{sup -2} for an implanted dose of 1x10{sup 16} cm{sup -2} with a maximum concentration of {approx}10 at. %. The strain observed in the Z-contrast images also suggests a significant concentration of local distortions within 3 nm from the interface, which, however, do not seem to involve intrinsic point defects.
Publication date: 
15 Aug 2008

Pei Lirong, Gerd Duscher, Christian Steen, Peter Pichler, Heiner Ryssel, Enrico Napolitani, Davide De Salvador, Alberto Maria Piro, Antonio Terrasi, Fabrice Severac, Filadelfo Cristiano, Karthik Ravichandran, Naveen Gupta, Wolfgang Windl

Biblio References: 
Volume: 104 Issue: 4
Journal of Applied Physics