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The determination of the dopant depth distribution in ultra shallow junctions in Si challenges the state-of-the-art of ion and electron beam characterization techniques. To achieve reliable results the combination of different experimental techniques is often necessary. In the framework of the EU project ANNA this crosscomparison of experimental techniques aimed to the dopant profile determination, is the subject of a specific joint research activity. In this work, part of this activity consisting in a combined investigation by medium energy ion scattering (MEIS), secondary ion mass spectrometry (SIMS) and tilted sample annular dark field scanning transmission electron microscopy (TSADF-STEM) is reported. Three as-implanted Si samples doped with As at different doses and energies were considered, ie 1x1015 As/cm2 at 0.5 keV, 5x1014 As/cm2 at 2.0 keV and 1x1015 As/cm2 at 3.0 keV.In the case of the MEIS …
IOP Publishing
Publication date: 
10 Jul 2009

Andrea Parisini, Vittorio Morandi, Jaap Van den Berg, Michael A Reading, Damiano Giubertoni, Paul Bailey, Tim Noakes

Biblio References: 
Issue: 22 Pages: 2007
ECS Meeting Abstracts