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The evolution of the implantation damage during a Pulsed Laser thermal annealing process is investigated by means of an accurate modeling which could stimulates focused experimental analyses. The model is based on the simulation of the detailed kinetic of the defect system in the extremely far-from-equilibrium conditions caused by the laser irradiation in the non-melting, melting and partial melting regimes. It considers defect (interstitials Is and vacancies Vs) clustering and annihilation in presence of fast varying temperature, high thermal gradients and phase transition. Simulations allow a characterization of the residual damage (in terms of total residual defect's density and cluster size distribution) as a function of the process conditions (i.e. laser fluence). The thermal budget supplied to the system in the submelting regime is not sufficient to drive a consistent defect evolution and the total defect's density is …
Publication date: 
29 Sep 2009

G Fisicaro, A La Magna, G Piccitto, V Privitera, K Huet, J Venturini, H Besaucele

Biblio References: 
Pages: 1-4
2009 17th International Conference on Advanced Thermal Processing of Semiconductors