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As an aid toward a better understanding of data retention of phase change memories we have analyzed in situ by Transmission Electron Microscopy the crystallization of amorphous Ge 2 Sb 2 Te 5 dots of 100 nm and 20 nm diameter, embedded in the hexagonal crystalline phase. Amorphization was obtained by 40 keV Ge+ irradiation at LN 2 through Electron Beam Lithography masked pattern. At 75 C/90 C, crystallization in 100 nm dots occurs by grain growth from the surrounding crystalline material, with an initial growth velocity of 0.6 (6.4) pm/s followed by a slower rate of 0.14 (1.7) pm/s. At 75 C, the 20 nm amorphous regions disappear just after two hours of annealing.
IOP Publishing
Publication date: 
3 Feb 2012

AM Mio, G D’Arrigo, E Carria, C Bongiorno, S Rossini, C Spinella, MG Grimaldi, E Rimini

Biblio References: 
Volume: 15 Issue: 4 Pages: H105
Electrochemical and Solid State Letters