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In this article we develop an analytical theory that correlates the macroscopic curvature of stressed film/substrate systems with the microscopic in-plane and out-of-plane deflections of planar rotators. Extending this stress-deflection relations in the case of nonlinear stress fields and validating the results with the aid of finite element simulations. We use this theory to study the heteroepitaxial growth of cubic silicon carbide on silicon (100) and discover that due, to defects generated on the silicon substrate during the carbonization process, wafer curvature techniques may not allow the determination of the stress field in the grown films either quantitatively or qualitatively.
Publication date: 
21 Oct 2011

Massimo Camarda, Ruggero Anzalone, Giuseppe D'Arrigo, Andrea Severino, Nicolò Piluso, Andrea Canino, Francesco La Via, Antonino La Magna

Biblio References: 
arXiv preprint arXiv:1110.4727