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An effective bottom-up technology for precisely controlling the amount of dopant atoms tethered on silicon substrates is presented. Polystyrene and poly(methyl methacrylate) polymers with narrow molecular weight distribution and end-terminated with a P-containing moiety were synthesized with different molar mass. The polymers were spin coated and subsequently end-grafted onto nondeglazed silicon substrates. P atoms were bonded to the surface during the grafting reaction, and their surface density was set by the polymer molar mass, according to the self-limiting nature of the “grafting to” reaction. Polymeric material was removed by O2 plasma hashing without affecting the tethered P-containing moieties on the surface. Repeated cycles of polymer grafting followed by plasma hashing led to a cumulative increase, at constant steps, in the dose of P atoms grafted to the silicon surface. P injection in the silicon …
American Chemical Society
Publication date: 
23 Jan 2018

Michele Perego, Gabriele Seguini, Elisa Arduca, Andrea Nomellini, Katia Sparnacci, Diego Antonioli, Valentina Gianotti, Michele Laus

Biblio References: 
Volume: 12 Issue: 1 Pages: 178-186
ACS nano