2019 | IMM Container

1300° C Annealing of 1× 1020 Al+ Ion Implanted 3C-SiC

Roberta Nipoti, Maria Concetta Canino, Filippo Bonafè, Frank Torregrosa, Sylvain Monnoye, Hugues Mank, Marcin Zielinski

2019-01-01

Biblio references: Volume: 963 Pages: 420-423

Origin: Materials Science Forum

WO3 Based Gas Sensors

Anna Staerz, Simona Somacescu, Mauro Epifani, Tamara Russ, Udo Weimar, Nicolae Barsan

2019-01-01

Biblio references: Volume: 2 Issue: 13 Pages: 826

Origin: Multidisciplinary Digital Publishing Institute Proceedings

High Resolution Investigation of Stacking Fault Density by HRXRD and STEM

Eric G Barbagiovanni, Alessandra Alberti, Corrado Bongiorno, Emanuele Smecca, Massimo Zimbone, Ruggero Anzalone, Grazia Litrico, Marco Mauceri, Antonino La Magna, Francesco La Via

2019-01-01

Biblio references: Volume: 963 Pages: 346-349

Origin: Materials Science Forum

Activation Energy for the Post Implantation Annealing of 1019 cm-3 and 1020 cm-3 Ion Implanted Al in 4H SiC

Roberta Nipoti, Maria Concetta Canino, Sergio Sapienza, Michele Bellettato, Giovanna Sozzi, Giovanni Alfieri

2019-01-01

Biblio references: Volume: 963 Pages: 416-419

Origin: Materials Science Forum

Tailoring Active Defect Centers During the Growth of Group IV Crystals

Michele Cascio, Ioannis Deretzis, Giuseppe Fisicaro, Giuseppe Falci, Giovanni Mannino, Antonino La Magna

2019-01-01

Biblio references: Volume: 12 Issue: 1 Pages: 32

Origin: Multidisciplinary Digital Publishing Institute Proceedings

Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates

Fan Li, Valdas Jokubavicius, Michael R Jennings, Rositza Yakimova, Amador Pérez Tomás, Stephen Russell, Yogesh Sharma, Fabrizio Roccaforte, Philip A Mawby, Francesco La Via

2019-01-01

Biblio references: Volume: 963 Pages: 353-356

Origin: Materials Science Forum

Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon

Patrick Fiorenza, Giuseppe Greco, Salvatore di Franco, Filippo Giannazzo, Sylvain Monnoye, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

2019-01-01

Biblio references: Volume: 963 Pages: 479-482

Origin: Materials Science Forum

1300° C Annealing of 1× 1020 Al+ Ion Implanted 3C-SiC

WO3 Based Gas Sensors

High Resolution Investigation of Stacking Fault Density by HRXRD and STEM

Activation Energy for the Post Implantation Annealing of 1019 cm-3 and 1020 cm-3 Ion Implanted Al in 4H SiC

Tailoring Active Defect Centers During the Growth of Group IV Crystals

Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates

Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon

Pages

Scientific Productions

Units in Italy

Contact info

Link Utili

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1300° C Annealing of 1× 1020 Al+ Ion Implanted 3C-SiC

WO3 Based Gas Sensors

High Resolution Investigation of Stacking Fault Density by HRXRD and STEM

Activation Energy for the Post Implantation Annealing of 1019 cm-3 and 1020 cm-3 Ion Implanted Al in 4H SiC

Tailoring Active Defect Centers During the Growth of Group IV Crystals

Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates

Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon

Pages

Scientific Productions

Units in Italy

Contact info

Link Utili