2016 | IMM Container

X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions

Marilena Vivona, Patrick Fiorenza, Salvatore Di Franco, Claude Marcandella, Marc Gaillardin, Sylvain Girard, Fabrizio Roccaforte

2016-01-01

Biblio references: Volume: 858 Pages: 659-662

Origin: Materials Science Forum

3C-SiC Epitaxy on Deeply Patterned Si (111) Substrates

Thomas Kreiliger, Marco Mauceri, Marco Puglisi, Fulvio Mancarella, Francesco La Via, Danilo Crippa, Wlodek Kaplan, Adolf Schöner, Anna Marzegalli, Leo Miglio, Hans von Känel

2016-01-01

Biblio references: Volume: 858 Pages: 151-154

Origin: Materials Science Forum

Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures

Gabriele Fisichella, Giuseppe Greco, Salvatore Di Franco, Raffaella Lo Nigro, Emanuela Schilirò, Fabrizio Roccaforte, Filippo Giannazzo

2016-01-01

Biblio references: Volume: 858 Pages: 1137-1140

Origin: Materials Science Forum

Atomistic Simulations and Interfacial Morphology of Graphene Grown on SiC (0001) and SiC (000-1) Substrates

Antonino La Magna, Ioannis Deretzis, Filippo Giannazzo, Giuseppe Nicotra, Fabrizio Roccaforte, Corrado Spinella, Rositza Yakimova

2016-01-01

Biblio references: Volume: 858 Pages: 1121-1124

Origin: Materials Science Forum

Forward Current of Al+ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components

Maurizio Puzzanghera, Roberta Nipoti

2016-01-01

Biblio references: Volume: 858 Pages: 773-776

Origin: Materials Science Forum

Flexible near infrared photoresistors based on recrystallized amorphous germanium thin films

A Ferrone, L Maiolo, A Minotti, A Pecora, De Iacovo, L Colace, SV Grayli, GW Leach, B Bahreyni

2016-01-01

Biblio references: Pages: 1-3

Origin: 2016 IEEE SENSORS

Fabrication of Nanostructured Ni and Ni-Pd electrodes for wateralkaline electrolyzer

F Ganci, R Inguanta, S Piazza, C Sunseri, S Lombardo

2016-01-01

Biblio references:

Origin: The 67th Annual Meeting of the International Society of Electrochemistry

Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements

Stefania Privitera, Grazia Litrico, Massimo Camarda, Nicolò Piluso, Francesco La Via

2016-01-01

Biblio references: Volume: 858 Pages: 380-383

Origin: Materials Science Forum

1950° C Annealing of Al+ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time

Roberta Nipoti, Antonella Parisini, Salvatore Vantaggio, Giovanni Alfieri, Alberto Carnera, Emanuele Centurioni, Elmi Ivan, Ulrike Grossner

2016-01-01

Biblio references: Volume: 858 Pages: 523-526

Origin: Materials Science Forum

Conduction Mechanisms at SiO2/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N2O

Patrick Fiorenza, Filippo Giannazzo, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Fabrizio Roccaforte

2016-01-01

Biblio references: Volume: 858 Pages: 705-708

Origin: Materials Science Forum

X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions

3C-SiC Epitaxy on Deeply Patterned Si (111) Substrates

Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures

Atomistic Simulations and Interfacial Morphology of Graphene Grown on SiC (0001) and SiC (000-1) Substrates

Forward Current of Al+ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components

Flexible near infrared photoresistors based on recrystallized amorphous germanium thin films

Fabrication of Nanostructured Ni and Ni-Pd electrodes for wateralkaline electrolyzer

Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements

1950° C Annealing of Al+ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time

Conduction Mechanisms at SiO2/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N2O

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