2009 | IMM Container

Nano-Silicon Sol-Gel Film Refraction Index Modulation with Femtosecond Laser

Antonela Dima, Massimo Gagliardi, Dun Liu, Walter Perrie, Craig J Williams, Ivo Rendina, Geoff Dearden, Ken G Watkins

2009-01-01

Biblio references: Volume: 154 Pages: 101-106

Origin: Solid State Phenomena

Light scattering study of DNA over a wide chain length range: comparison with wormlike model

P Baeri, M Zimbone, ML Barcellona, G Bonaventura

2009-01-01

Biblio references: Volume: 38 Pages: s109-s109

Origin: 7th EBSA European Biophysics Congress

Activation of ion implanted Si for backside processing by Ultra-fast Laser Thermal Annealing: Energy homogeneity and micro-scale sheet resistance

K Huet, Rong Lin, C Boniface, F Desse, Dirch Hjorth Petersen, Ole Hansen, N Variam, A La Magna, M Schuhmacher, A Jensen, PF Nielsen, H Besaucele, J Venturing

2009-01-01

Biblio references: Pages: 1-19

Origin: 2009 17th International Conference on Advanced Thermal Processing of Semiconductors

Nelle produzioni biologiche una biodiversità da riscoprire:" La Gallina Mediterranea"

Carlo Cosentino, C Cocca, M Catalano, G Mele

2009-01-01

Biblio references:

Origin: Stati Generali per lo Sviluppo dell'Agricoltura Biologica (INEA-ALSIA)

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Salvatore di Franco, Valeria Puglisi, Vito Raineri

2009-01-01

Biblio references: Volume: 600 Pages: 1341-1344

Origin: Materials Science Forum

Ampliamento vescicale mediante ureterocistoplastica nei paesi in via di sviluppo. nostra esperienza

L Lombardi, Mg Scuderi, Di BENEDETTO V, G Casadio, C DEL Rossi

2009-01-01

Biblio references: Pages: 283-283

Origin: 2° Congresso Nazionale Congiunto SICP, SIUP. SIVI, SINP.

3C-SiC Heteroepitaxy on (100),(111) and (110) Si using Trichlorosilane (TCS) as the Silicon Precursor.

Ruggero Anzalone, Andrea Severino, Giuseppe D'Arrigo, Corrado Bongiorno, Patrick Fiorenza, Gaetano Foti, Giuseppe Condorelli, Marco Mauceri, Giuseppe Abbondanza, Francesco La Via

2009-01-01

Biblio references: Volume: 600 Pages: 243-246

Origin: Materials Science Forum

Conductometric gas-sensors based on metal-oxide nanowires for chemical warfare agents detection, at conference Gas sensors based on semiconducting metal oxides

Elisabetta Comini, Andrea Ponzoni, Matteo Ferroni, Guido Faglia, Giorgio Sberveglieri

2009-01-01

Biblio references: Pages: ---

Origin: conference Gas sensors based on semiconducting metal oxides

SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor at very high growth rate

Francesco La Via, Gaetano Izzo, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, LMS Perdicaro, Giuseppe Abbondanza, F Portuese, G Galvagno, Salvatore Di Franco, Lucia Calcagno, Gaetano Foti, Gian Luca Valente, Danilo Crippa

2009-01-01

Biblio references: Volume: 600 Pages: 123-126

Origin: Materials Science Forum

Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation

Francesco Moscatelli, Roberta Nipoti, Sandro Solmi, Stefano Cristiani, Michele Sanmartin, Antonella Poggi

2009-01-01

Biblio references: Volume: 600 Pages: 699-702

Origin: Materials Science Forum

Nano-Silicon Sol-Gel Film Refraction Index Modulation with Femtosecond Laser

Light scattering study of DNA over a wide chain length range: comparison with wormlike model

Activation of ion implanted Si for backside processing by Ultra-fast Laser Thermal Annealing: Energy homogeneity and micro-scale sheet resistance

Nelle produzioni biologiche una biodiversità da riscoprire:" La Gallina Mediterranea"

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

Ampliamento vescicale mediante ureterocistoplastica nei paesi in via di sviluppo. nostra esperienza

3C-SiC Heteroepitaxy on (100),(111) and (110) Si using Trichlorosilane (TCS) as the Silicon Precursor.

Conductometric gas-sensors based on metal-oxide nanowires for chemical warfare agents detection, at conference Gas sensors based on semiconducting metal oxides

SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor at very high growth rate

Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation

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