2009 | IMM Container

Carrier mobility degradation in highly B-doped junctions

Maria Aboy, Lourdes Pelaz, Pedro Lopez, E Bruno, S Mirabella

2009-02-11

Biblio references: Pages: 34-37

Origin: 2009 Spanish Conference on Electron Devices

Developing a miniaturized continuous flow electrochemical cell for biosensor applications

Mihaela Ilie, E Ovreiu, R Dejana, V Foglietti, L Nardi, A Masci, B Lanza, L Della Seta, MR Montereali, W Vastarella, R Pilloton

2009-01-07

Biblio references: Volume: 7297 Pages: 729724

Origin: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV

3C-SiC Heteroepitaxy on (100),(111) and (110) Si using Trichlorosilane (TCS) as the Silicon Precursor.

Ruggero Anzalone, Andrea Severino, Giuseppe D'Arrigo, Corrado Bongiorno, Patrick Fiorenza, Gaetano Foti, Giuseppe Condorelli, Marco Mauceri, Giuseppe Abbondanza, Francesco La Via

2009-01-01

Biblio references: Volume: 600 Pages: 243-246

Origin: Materials Science Forum

Conductometric gas-sensors based on metal-oxide nanowires for chemical warfare agents detection, at conference Gas sensors based on semiconducting metal oxides

Elisabetta Comini, Andrea Ponzoni, Matteo Ferroni, Guido Faglia, Giorgio Sberveglieri

2009-01-01

Biblio references: Pages: ---

Origin: conference Gas sensors based on semiconducting metal oxides

SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor at very high growth rate

Francesco La Via, Gaetano Izzo, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, LMS Perdicaro, Giuseppe Abbondanza, F Portuese, G Galvagno, Salvatore Di Franco, Lucia Calcagno, Gaetano Foti, Gian Luca Valente, Danilo Crippa

2009-01-01

Biblio references: Volume: 600 Pages: 123-126

Origin: Materials Science Forum

Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation

Francesco Moscatelli, Roberta Nipoti, Sandro Solmi, Stefano Cristiani, Michele Sanmartin, Antonella Poggi

2009-01-01

Biblio references: Volume: 600 Pages: 699-702

Origin: Materials Science Forum

Ampliamento vescicale mediante ureterocistoplastica nei paesi in via di sviluppo. nostra esperienza

L Lombardi, Mg Scuderi, Di BENEDETTO V, G Casadio, C DEL Rossi

2009-01-01

Biblio references: Pages: 283-283

Origin: 2° Congresso Nazionale Congiunto SICP, SIUP. SIVI, SINP.

SPUTTERING DEPOSITION OF NANOSTRUCTURED p-TYPE GE-ON-SI THIN FILMS: HETEROEPITAXY AND NEAR-IR PHOTORESPONSE

M FERE, A ZAPPETTINI, D PICCININ, R COSTANZO, M SIGNORELLI, M LANATA, SM PIETRALUNGA, P OSSI, M MARTINELLI, A LAMPERTI

2009-01-01

Biblio references: Pages: B5. 6-1-B5. 6-4

Origin: FOTONICA-2009

L’approccio narrativo nella formazione degli studenti infermieri: valutazione di un’esperienza

S Lombardo, Lorenza Garrino

2009-01-01

Biblio references: Volume: 9 Pages: 135-135

Origin: Medicina narrativa e malattie rare

High quality single crystal 3C-SiC (111) films grown on Si (111)

Christopher Locke, Ruggero Anzalone, Andrea Severino, Corrado Bongiorno, Grazia Litrico, Francesco La Via, Stephen E Saddow

2009-01-01

Biblio references: Volume: 615 Pages: 145-148

Origin: Materials Science Forum

Carrier mobility degradation in highly B-doped junctions

Developing a miniaturized continuous flow electrochemical cell for biosensor applications

3C-SiC Heteroepitaxy on (100),(111) and (110) Si using Trichlorosilane (TCS) as the Silicon Precursor.

Conductometric gas-sensors based on metal-oxide nanowires for chemical warfare agents detection, at conference Gas sensors based on semiconducting metal oxides

SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor at very high growth rate

Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation

Ampliamento vescicale mediante ureterocistoplastica nei paesi in via di sviluppo. nostra esperienza

SPUTTERING DEPOSITION OF NANOSTRUCTURED p-TYPE GE-ON-SI THIN FILMS: HETEROEPITAXY AND NEAR-IR PHOTORESPONSE

L’approccio narrativo nella formazione degli studenti infermieri: valutazione di un’esperienza

High quality single crystal 3C-SiC (111) films grown on Si (111)

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