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In this work we present the development and the application of a new TCAD modelling scheme to simulate the effects of radiation damage on silicon radiation detectors at the very high fluence levels expected at High Luminosity LHC (up to 2× 10 16 1MeV n/cm 2). In particular, we propose a combined approach for the analysis of the surface effects (oxide charge build-up and interface trap states introduction) as well as bulk effects (deep level traps and/or recombination centers introduction). Experimental measurements have been carried out aiming at: i) extraction from simple test structures of relevant parameters to be included within the TCAD model and ii) validation of the new modelling scheme through comparison with measurements of different test structures (eg different technologies) before and after irradiation. The good agreements between experimental measurements and …
IOP Publishing
Publication date: 
14 Dec 2016

A Morozzi, D Passeri, F Moscatelli, G-F Dalla Betta, GM Bilei

Biblio References: 
Volume: 11 Issue: 12 Pages: C12028
Journal of Instrumentation