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Van der Waals (vdW) epitaxy is an attractive method for the fabrication of vdW heterostructures. Here Sb 2 Te 3 films grown on three different kind of graphene substrates (monolayer epitaxial graphene, quasi freestanding bilayer graphene and the SiC (6√ 3× 6√ 3) R30 buffer layer) are used to study the vdW epitaxy between two 2-dimensionally (2D) bonded materials. It is shown that the Sb 2 Te 3/graphene interface is stable and that coincidence lattices are formed between the epilayers and substrate that depend on the size of the surface unit cell. This demonstrates that there is a significant, although relatively weak, interfacial interaction between the two materials. Lattice matching is thus relevant for vdW epitaxy with two 2D bonded materials and a fundamental design parameter for vdW heterostructures.
Nature Publishing Group
Publication date: 
14 Dec 2015

Jos E Boschker, Lauren A Galves, Timur Flissikowski, Joao Marcelo J Lopes, Henning Riechert, Raffaella Calarco

Biblio References: 
Volume: 5 Issue: 1 Pages: 1-8
Scientific reports