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Phosphorous implanted n+/p diodes have been included in the masks for manufacturing n-MOSFET devices and processed in the same way of source/drain regions. The diode junctions were made by a P+ implantation at 300 C and a post implantation annealing at 1300 C. The diode emitter area was protected by 0.6 m thick CVD oxide during the processing of the MOSFET gate oxide. Three gate oxide processes were taken into account: two of them include a N implantation before a wet oxidation, while the third one was a standard oxidation. Considering the effect on the n+/p diodes, the main difference among the processes were the wet thermal oxidation time that ranged between 180 and 480 min at a temperature of 1100 C. The diode current-voltage characteristics show similar forward but different reverse curves in the temperature range of 25-290 C. Differences in reverse bias voltage as a function of the …
Trans Tech Publications Ltd
Publication date: 
1 Jan 2009

Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Stefano Cristiani, Michele Sanmartin

Biblio References: 
Volume: 615 Pages: 687-690
Materials Science Forum