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A set of ultra low energy (ULE) As implants in Si with several implant energies (0.5-5 keV ions using a dose of 1x1015 cm-2) and doses (2 keV ions using doses from 1x1014 to 5x1015 cm-2) were prepared and characterized by spectroscopic ellipsometry (SE), medium energy ion scattering (MEIS) and annular dark field scanning transmission electron microscopy (ADF-STEM). In particular, the comparison of the SE and MEIS measured values show a very good agreement except for the case of the lowest energy. The samples have been measured by a SOPRA ES4G ellipsometer in the photon energy range of 1.7 to 4.7 eV in steps of 0.05 eV. First, a simple optical model was applied to analyze the experimental SE data of As-implanted samples to obtain a rough overview of the expected damage range: the experimental output was fitted using a simplified'box-type'optical model for the damaged layer and with a …
IOP Publishing
Publication date: 
10 Jul 2009

Miklos Fried, Peter Petrik, Jaap Van den Berg, Michael A Reading, Andrea Parisini

Biblio References: 
Issue: 22 Pages: 1996
ECS Meeting Abstracts