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Aiming to minimize the interface state density, we fabricated MOS capacitors on n-type 4H-SiC by using wet oxidation of nitrogen implanted layers. We investigated a wide range of implantation dose, including a high dose able to amorphise a surface SiC layer with the intent to reduce the oxidation time. The oxide quality and the SiO2-SiC interface properties were characterized by capacitance-voltage measurements of the MOS capacitors. The proposed process, in which nitrogen is ion-implanted on SiC layer before a wet oxidation, is effective to reduce the density of interface states near the conduction band edge if a high concentration of nitrogen is introduced at the SiO2-SiC interface. We found that only the nitrogen implanted at the oxide-SiC interface reduces the interface states and we did not observe the generation of fixed positive charges in the oxide as a consequence of nitrogen implantation. Furthermore …
Trans Tech Publications Ltd
Publication date: 
1 Jan 2007

Antonella Poggi, Francesco Moscatelli, Yasuto Hijikata, Sandro Solmi, Michele Sanmartin, Fabrizio Tamarri, Roberta Nipoti

Biblio References: 
Volume: 556 Pages: 639-642
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