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Pulsed laser thermal annealing (LTA) has been thoroughly investigated for the formation of low-resistance stanogermanide contacts on Ge0.91Sn0.09 substrates. Three different metals (Ni, Pt, and Ti) were characterized using a wide laser energy density range (100–500 mJ/cm2). Electrical performance, surface quality, cross-sectional crystallographic, and elemental analysis have been systematically examined in order to identify the ideal process window. Electrical characterization showed that the samples processed by LTA had lower resistance variability compared with the rapid thermal anneal (RTA) counterpart. Among the three metals used, Ni and Pt were the most promising candidates for future sub-nm applications based on the low resistance values. The stanogermanide alloys suffered a high degeneration as the LTA thermal budget increased. Cross-sectional elemental analysis showed a highly unusual …
Publication date: 
1 Jan 2021

Emmanuele Galluccio, Gioele Mirabelli, Alan Harvey, Michele Conroy, Enrico Napolitani, Ray Duffy

Biblio References: 
Volume: 121 Pages: 105399
Materials Science in Semiconductor Processing