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We show that the dissociation of the NH complex in hydrogenated III-N-Vs can be laser activated at temperatures that are significantly smaller than those (> 200 C) required for thermal dissociation due to a resonant photon absorption by the NH complex. This phenomenon provides a mechanism for profiling the band-gap energy in the growth plane of the III-N-Vs with submicron spatial resolution and high energy accuracy; the profiles are erasable and the alloys can be rehydrogenated making any nanoscale in-plane band-gap profile rewritable.
American Physical Society
Publication date: 
10 Oct 2012

N Balakrishnan, G Pettinari, O Makarovsky, Lyudmila Turyanska, MW Fay, M De Luca, A Polimeni, M Capizzi, F Martelli, S Rubini, A Patanè

Biblio References: 
Volume: 86 Issue: 15 Pages: 155307
Physical Review B