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In this study, we used n+p mesa diodes where the highly arsenic doped n+ top layer was grown by molecular-beam epitaxy on top of a 5-μm thick p-type layer grown by chemical-vapour deposition. The diodes were irradiated with 2 MeV electrons at room temperature and the resulting defects in the p-type region were studied by Laplace and standard deep-level transient spectroscopy. A new defect with an apparent energy position of 0.20 eV above the valence band is shown to migrate from the n+ top layer into the p-type material where it is observed by DLTS. An annealing study shows that this defect grows in at ∼400 K and disappears at ∼460 K. We argue that this defect is the As2V complex, and that it is formed in the top layer when negatively charged AsV pairs, which are generated in the n+ top layer by the electron irradiation, migrate and react with the abundant and positively charged As donors. Once …
Publication date: 
1 Dec 2006

H Kortegaard Nielsen, A Mesli, L Dobaczewski, K Bonde Nielsen, CE Lindberg, V Privitera, A Nylandsted Larsen

Biblio References: 
Volume: 253 Issue: 1-2 Pages: 172-175
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms