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GeSbTe alloys exhibit a large variation of the optical and electrical properties when changing from the amorphous to the crystalline state, in the metastable rocksalt structure (fcc). The amorphous-to-fcc transition can be reversibly induced by laser irradiation or current pulses. For these reasons, these materials have been used as optical rewritable storage media and have also been recently proposed for phase change nonvolatile random access memories (PCRAM)[1]. The storage mechanism is the structural reversible phase change. The two logic states are represented by the crystalline (low resistivity) versus the amorphous phase (high resistivity).GeSbTe alloys with compositions centering around the GeTe–Sb2Te3 pseudobinary line, in the ternary phase diagram, are very promising as data storage media. They exhibit high crystallization rate and good reversibility between amorphous and crystalline phases …
Springer, London
Publication date: 
1 Jan 2005

S Privitera, C Bongiorno, E Rimini, R Zonca

Biblio References: 
Pages: 189-196
Materials for Information Technology