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In this paper ion activation of implanted silicon using ultra-fast laser thermal annealing (LTA) process was discussed. The results stated that there was high dopant activation using LTA process for over 70%, excellent within shot activation uniformity, and there was a possibility for overlap parameter optimization. It was observed that, for activation LTA process, shallow box-shaped profiles- high diffusivity of B in liquids and high-temperatures was observed only near the surface in a submicrosecond timescale. Possible solutions were suggested as to low-cost and high-end for overlap optimization and full-die exposure optics.
Publication date: 
1 Jan 2009

K Huet, Rong Lin, C Boniface, F Desse, Dirch Hjorth Petersen, Ole Hansen, N Variam, A La Magna, M Schuhmacher, A Jensen, PF Nielsen, H Besaucele, J Venturing

Biblio References: 
Pages: 1-19
2009 17th International Conference on Advanced Thermal Processing of Semiconductors