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Article PreviewArticle PreviewArticle Preview3C-SiC devices are hampered by the defect density in heteroepitaxial films. Acting on the substrate, it is possible to achieve a better compliance between Si and 3C-SiC. We present here an approach to favorite defect geometrical reduction in both [] and [] directions by creating Inverted Silicon Pyramids (ISP). A study of 3C-SiC growth on ISP is reported showing benefits in the film quality and a reduction in the linear density of stacking faults. Growth on ISP leads also to a decrease in the 3C-SiC residual stress as well as in the bow of the Si/SiC system.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2010

Giuseppe D'Arrigo, Andrea Severino, G Milazzo, Corrado Bongiorno, Nicolò Piluso, Giuseppe Abbondanza, Marco Mauceri, Giuseppe Condorelli, Francesco La Via

Biblio References: 
Volume: 645 Pages: 135-138
Materials Science Forum