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The growth morphology of epitaxial 3C-SiC crystals grown on hexagonal pillars deeply etched into Si (111) substrates is presented. Different growth velocities of side facets let the top crystal facet evolve from hexagonal towards triangular shape during growth. The lateral size and separation between Si pillars determine the onset of fusion between neighboring crystals during growth at a height tailoring of which is crucial to reduce the stacking fault (SF) density of the coalesced surface. Intermediate partial fusion of neighboring crystals is shown as well as a surface of fully coalesced crystals.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2016

Thomas Kreiliger, Marco Mauceri, Marco Puglisi, Fulvio Mancarella, Francesco La Via, Danilo Crippa, Wlodek Kaplan, Adolf Schöner, Anna Marzegalli, Leo Miglio, Hans von Känel

Biblio References: 
Volume: 858 Pages: 151-154
Materials Science Forum