This study shows that, after annealing at 1950 C, a 1× 10 20 cm-3 Al+ implanted 4H-SiC material shows a decreasing resistivity with increasing annealing time in the range 5-25 min. After this, the resistivity remains constant up to an annealing time of 40 min. The estimated minimum time to gain the thermal equilibrium in this implanted material at 1950 C is 12 min. Electrical characterization has been performed in the 20-680 K temperature range.