Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations | IMM Container

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Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

Type:

Journal

Description:

Publisher:

North-Holland

Publication date:

15 Aug 2021

Authors:

Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo, Mario S Alessandrino, Angelo Messina, Mario Saggio, Fabrizio Roccaforte

Biblio References:

Volume: 557 Pages: 149752

Origin:

Applied Surface Science

Link:

https://scholar.google.it/citations?view_op=view_citation&hl=en&citation_for_vie…