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The integration of epitaxial graphene on 4H-SiC with different metals may allow tunability of electronic and optical properties of graphene, enabling novel high-performance devices. Here we present a Raman spectroscopy study on epitaxial graphene decorated with electrodeposited Pb and Li adatoms and with magnetron sputtered 5 nm-thick Ag nano-island films. We find that the presence of metals on the epitaxial graphene surface generates defects and induces n-type doping, which is evidenced by the observation of the defect related Raman modes (namely D, D′ and D + G) and systematic red-shift of the main characteristic modes of graphene. In-depth statistical analysis of the Raman data before and after metal deposition complemented by density functional theory (DFT) calculations allowed to link the interaction strength between the three selected metals and graphene with the metal-induced changes …
Publication date: 
1 Jan 2020

Ivan Shtepliuk, Ivan Gueorguiev Ivanov, Mikhail Vagin, Ziyauddin Khan, Tihomir Iakimov, Nikolaos Pliatsikas, Kostas Sarakinos, F Giannazzo, Rositsa Yakimova

Biblio References: 
Volume: 20 Pages: 37-45
Materials Today: Proceedings