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Full performance of GaN power devices is not attained yet due to their self-heating. Towards solving this issue Silicon Carbide is a common substrate for growth of GaN and AlGaN epitaxial layers. In spite of the superior thermal conductivity of SiC compared to e.g. Sapphire or Silicon, thermal management of GaN based devices is still a challenge. This talk will review recent research appraising the benefits of graphene integration with III-N for high power electronics. The merits of graphene as a 2D carbon made material are well demonstrated. We will present, from a material perspective, the recent progresses in the growth of high quality GaN layers on graphene templates. The latter are obtained via sublimation epitaxy on SiC and this process and the graphene quality will be also discussed in the view of template design and its role in the subsequent CaN and AlN deposition. Furthermore, the …
IOP Publishing
Publication date: 
23 Jul 2018

Rositsa Yakimova, Andras Kovacs, Anelia Kakanakova, Filippo Giannazzo, Bela Pecz

Biblio References: 
Issue: 38 Pages: 1281
ECS Meeting Abstracts