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The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al 0.5 Ga 0.5 N/sapphire templates by propane (C 3 H 8) chemical vapor deposition at a temperature of 1350 C. After optimization of the C 3 H 8 flow rate, a uniform and conformal Gr coverage was achieved, which proved beneficial to prevent degradation of AlGaN morphology. X-ray photoemission spectroscopy revealed Ga loss and partial oxidation of Al in the near-surface AlGaN region. Such chemical modification of a~ 2 nm thick AlGaN surface region was confirmed by cross-sectional scanning transmission electron microscopy combined with electron energy loss spectroscopy, which also showed the presence of a bilayer of Gr with partial sp 2/sp 3 hybridization. Raman spectra indicated that the …
IOP Publishing
Publication date: 
9 Oct 2020

F Giannazzo, R Dagher, E Schilirò, SE Panasci, G Greco, G Nicotra, F Roccaforte, S Agnello, J Brault, Y Cordier, A Michon

Biblio References: 
Volume: 32 Issue: 1 Pages: 015705