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Interfacing ferromagnetic materials with topological insulators is an intriguing strategy in order to enhance spin-to-charge conversion mechanisms, paving the way toward highly efficient spin-based electronic devices. In particular, the use of large-scale deposition techniques is demanding for a sustainable and cost-effective industrial technology transfer. In this work, we study the magnetic properties of the Co/Sb 2 Te 3 heterostructure, where the ferromagnetic Co layer is deposited by atomic layer deposition on top of the Sb 2 Te 3 topological insulator, which is grown by metal organic chemical vapor deposition. In particular, broadband ferromagnetic resonance is employed to characterize the Co/Sb 2 Te 3 system and the reference Co/Pt heterostructure. For Co/Sb 2 Te 3, we extract an effective magnetic anisotropy constant K e f f= 4.26∙ 10 6 erg cm 3, which is an order of magnitude higher than in Co/Pt K eff= 0.43∙ …
Publication date: 
1 Sep 2020

Emanuele Longo, Claudia Wiemer, Matteo Belli, Raimondo Cecchini, Massimo Longo, Matteo Cantoni, Christian Rinaldi, Michael D Overbeek, Charles H Winter, Gianluca Gubbiotti, Graziella Tallarida, Marco Fanciulli, Roberto Mantovan

Biblio References: 
Volume: 509 Pages: 166885
Journal of Magnetism and Magnetic Materials