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In spite of its great promise for energy‐efficient power conversion, the electronic quality of cubic silicon carbide (3C‐SiC) on silicon is currently limited by the presence of a variety of extended defects in the heteroepitaxial material. However, the specific role of the different defects on the electronic transport is still under debate. A macro‐ and nanoscale characterization of Schottky contacts on 3C‐SiC/Si is carried out to elucidate the impact of the anti‐phase boundaries (APBs) and stacking faults (SFs) on the forward and reverse current–voltage characteristics of these devices. Current mapping of 3C‐SiC by conductive atomic force microscopy directly shows the role of APBs as the main defects responsible of the reverse bias leakage, while both APBs and SFs are shown to work as preferential current paths under forward polarization. Distinct differences between these two types of defects are also confirmed by …
Publication date: 
1 Feb 2020

Filippo Giannazzo, Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Massimo Zimbone, Francesco La Via, Marcin Zielinski, Fabrizio Roccaforte

Biblio References: 
Volume: 6 Issue: 2 Pages: 1901171
Advanced Electronic Materials