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The exploitation of intersubband transitions in Ge/SiGe quantum cascade devices could pave the way towards the integration of THz light emitters into the silicon-based technology. Aiming at the realization of a Ge/SiGe Quantum Cascade Laser (QCL), we investigate optical and structural properties of n-type Ge/SiGe coupled quantum well systems. The samples have been investigated by means of X-ray diffraction, scanning transmission electron microscopy, atom probe tomography and Fourier Transform Infrared absorption spectroscopy to assess the growth capability with respect to QCL design requirements, carefully identified by means of modelling based on the non-equilibrium Green function formalism.
Publication date: 
1 Sep 2019

Michele Montanari, Chiara Ciano, Luca Persichetti, Luciana Di Gaspare, Michele Virgilio, Giovanni Capellini, Marvin Zoellner, Oliver Skibitzki, David Stark, Giacomo Scalari, Jérome Faist, Douglas J Paul, Thomas Grange, Stefan Birner, M Scuderi, Giuseppe Nicotra, Oussama Moutanabbir, Samik Mukherjee, Laura Baldassarre, Michele Ortolani, Monica De Seta

Biblio References: 
Pages: 1-2
2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)