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GeTe has been predicted to be the father compound of a new class of multifunctional materials, ferroelectric Rashba semiconductors, displaying a coupling between spin-dependent k-splitting and ferroelectricity. In this paper, we report on epitaxial Fe/GeTe(111) heterostructures grown by molecular beam epitaxy. Spin-pumping experiments have been performed in a radio-frequency cavity by pumping a spin current from the Fe layer into GeTe at the Fe ferromagnetic resonance and detecting the transverse charge current originated in the slab due to spin-to-charge conversion. Preliminary experiments indicate that a clear spin to charge conversion exists, thus unveiling the potential of GeTe for spin-orbitronics.
AIP Publishing LLC
Publication date: 
1 Mar 2016

Christian Rinaldi, JC Rojas-Sánchez, RN Wang, Y Fu, S Oyarzun, L Vila, Stefano Bertoli, Marco Asa, Lorenzo Baldrati, Matteo Cantoni, J-M George, R Calarco, A Fert, Riccardo Bertacco

Biblio References: 
Volume: 4 Issue: 3 Pages: 032501
APL Materials