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Laser annealing (LA), with space uniform beams (over∼ cm2 areas) and nanosecond range pulses, is the reference annealing technique in micro-and nano-electronics when strongly confined heating is needed in the process flows. Indeed, due to its low in-depth thermal diffusion, laser anneal is nowadays widely applied as a post-fabrication annealing step to activate isolated doped regions (eg back junctions) with a null or strongly reduced heating of the other zones of the devices. The application of the process in future electronic device generation is hindered by the difficulties in the process control. Indeed, LA process is highly influenced by the interaction between electromagnetic (em) field and complex device structures. Models of laser annealing process have been developed by our team for particular limited applications and implemented in academic or commercial package [1, 2, 3, 4]. However, several limitations remain (see eg discussion in Ref.[5]) in the previous modeling approach for the general application in future devices, characterized by complex structures with nm wide elements made of different materials/phases. In the paper we present a FEniCS based tool (named LIAB: LASSE Innovation Application Booster), in the development stage, for the simulation of LA process. This is a complex self-consistent problem, where the heating is evaluated by mean of the time harmonic solution of the Maxwell equations and the source term in the heat equation is
Publication date: 
1 Jan 2017

A La Magna, SF Lombardo, I Deretzis, A Verstraete, B Lespinasse, K Huet

Biblio References: 
Issue: 32
2017 FEniCS conference