-A A +A
Article PreviewArticle PreviewArticle PreviewSilicon carbide (SiC) is an attractive material for power devices owing to the availability of high-quality epitaxial wafers and superior physical properties, such as its high breakdown electric field strength, high electron mobility, and low anisotropy. Ion implantation is a key process for both n-and p-type selective doping of SiC devices. A subsequent annealing in the temperature range of 1600-1800 C is required to remove the damage induced by the implantation process and to electrically activate the implanted dopants. The aim of this work is the investigation of the effect of thermal annealing on the damage induced by Phosphorous ion implantation to produce n-type regions.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2019

Andrea Severino, Domenico Mello, Simona Boninelli, Fabrizio Roccaforte, Filippo Giannazzo, Patrick Fiorenza, Cristiano Calabretta, Lucia Calcagno, Nicolò Piluso, Giuseppe Arena

Biblio References: 
Volume: 963 Pages: 407-411
Materials Science Forum