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The hot electron transistor (HET) is an unipolar majority carrier vertical device with great potential for high frequency (THz) applications. Recently, graphene (Gr) heterostructures with Nitrides have been considered as a promising material system to implement this device concept, with GaN/AlGaN (or GaN/AlN) working as emitter/emitter‐base barrier and Gr as the ultrathin base enabling ballistic transit of hot electrons. In this work, the main issues related to the fabrication of Gr/Nitrides heterojunctions are discussed. An optimized transfer procedure of large‐area Gr membranes onto AlGaN/GaN grown on Si(111) is illustrated. In particular, a soft O2 plasma pretreatment of the AlGaN surface is found to greatly improve the Gr adhesion, resulting in a reduced cracks density. A nanoscale electrical characterization of the obtained Gr/AlGaN/GaN heterostructures was carried out by conductive atomic force microscopy, to …
Publication date: 
1 May 2018

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Emanuela Schilirò, Ioannis Deretzis, Raffaella Lo Nigro, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Stella Lo Verso, Sebastiano Ravesi, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Roy Dagher, Eric Frayssinet, Adrien Michon, Yvon Cordier

Biblio References: 
Volume: 215 Issue: 10 Pages: 1700653
physica status solidi (a)