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The structural and the electronic properties of monolayer graphene made by chemical vapor deposition and transferred on various oxide substrates (SiO 2, Al 2 O 3, and HfO 2) are investigated by Raman Spectroscopy and Atomic Force Microscopy in order to highlight the influence of the substrate on the features of p-doping obtained by O 2 thermal treatments. By varing the treatment temperature up to 400° C, the distribution of the reaction sites of the substrates is evaluated. Their total concentration and the consequent highest doping available is determined and it is shown that this latter is linked to the water affinity of the substrate. Finally, by varing the exposure time to the gas up to 2 h, the kinetics of doping is investigated. The doping process is found to be better described by a diffusion limited kinetic model, ascribable to the diffusion of O 2 in the interstitial space between graphene and the substrate. After this …
Publication date: 
1 Aug 2019

Angelo Armano, Gianpiero Buscarino, Marco Cannas, Franco Mario Gelardi, Filippo Giannazzo, Emanuela Schilirò, Raffaella Lo Nigro, Simonpietro Agnello

Biblio References: 
Volume: 149 Pages: 546-555