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Interfacing Topological Insulators (TI) with ferromagnetic (FM) layers is a promising route towards the next generation of ultra-low power spintronic devices based on charge-to-spin current conversion. Here, we present the Fe/Sb2Te3 interface structure, chemical composition and magnetic properties. Thin films (30 nm) of the topological insulator Sb2Te3 were synthesized by Metal Organic Chemical Vapor Deposition (MOCVD) at room temperature on Si/SiO2 substrates, then capped with a 57Fe(1 nm)/54Fe(10 nm) bilayer by Pulsed Laser Deposition (PLD) to allow interface-sensitive Conversion Electron Mössbauer Spectroscopy (CEMS). X-ray diffraction (XRD) showed the polycrystalline nature of both the Fe and Sb2Te3 layers. X-ray reflectivity (XRR) identified a non-trivial layered structure with the presence of an intermixed layer at the Fe/Sb2Te3 interface. Time-of-Flight Secondary Ion Mass Spectrometry (ToF …
Publication date: 
4 Dec 2018

E Longo, C Wiemer, R Cecchini, M Longo, A Lamperti, A Khanas, A Zenkevich, M Fanciulli, R Mantovan

Biblio References: 
Journal of Magnetism and Magnetic Materials