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Understanding the physics and technology of Schottky contacts to Silicon Carbide is important, for both academic and industrial researchers. In fact, the rectifying contact is a tool for studying carrier transport at metal/semiconductor interfaces, as well as forming the main building block of the Schottky Barrier Diode. In this chapter, the physics of metal/SiC rectifying contacts and the technology of 4H-SiC Schottky diodes are reviewed, presenting a survey of relevant results on this topic, from fundamental concepts of Schottky barriers, to practical information for real device fabrication. Selected examples of 4H-SiC Schottky diodes applications are also briefly discussed.
Materials Research Forum LLC
Publication date: 
20 Sep 2018

F Roccaforte, G Brezeanu, PM Gammon, F Giannazzo, S Rascunà, M Saggio

Biblio References: 
Volume: 37 Pages: 127-190
Advancing Silicon Carbide Electronics Technology I: Metal Contacts to Silicon Carbide: Physics, Technology, Applications