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This paper reports on the physical and temperature-dependent electrical characterizations of the oxide/semiconductor interface in MOS capacitors with a SiO 2 layer deposited on 4H-SiC using dichlorosilane and nitrogen-based vapor precursors. The capacitors, subjected to a standard post deposition annealing process in N 2 O, exhibited an interface state density D it≈ 9.0× 10 11 cm− 2 eV− 1 below the conduction band edge. At room temperature, a barrier height (conduction band offset) of 2.8 eV was observed, along with the presence of negative charges in the insulator. The SiO 2 insulating properties were evaluated by studying the experimental temperature-dependence of the gate current. In particular, the temperature-dependent electrical measurements showed a negative temperature coefficient of the Fowler-Nordheim electron barrier height (dΦ B/dT=− 0.98 …
Publication date: 
23 Nov 2017

Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Biblio References: 
Materials Science in Semiconductor Processing