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We present a stochastic model for resistance switching devices in which a square grid of resistor breakers plays the role of the insulator switching layer. The probability of breaker switching between two fixed resistance values, and , is determined by the corresponding voltage drop and thermal Joule heating. The breaker switching produces the overall device resistance change. Salient features of all the switching operations of bipolar resistance switching memories (RRAMs) are reproduced by the model and compared to a prototypical -based RRAM device. In particular, the need of a forming process that leads a fresh highly insulating device to a low resistance state (LRS) is captured by the model. Moreover, the model is able to reproduce the RESET process, which partially restores the insulating state through a gradual resistance transition as a function of the applied voltage and the abrupt …
Springer US
Publication date: 
1 Dec 2017
Biblio References: 
Volume: 16 Issue: 4 Pages: 1154-1166
Journal of Computational Electronics