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Experimental evidences and microscopic modelling of the mechanism of B diffusion in Si and Ge are given. In both the lattices B migrates by the mediation of self-interstitials (Is). In Si, B diffusion occurs mainly through the formation of a BI0 complex, after interactions of BS-with I0 or with I++ in intrinsic condition or high hole densities, respectively, followed by a proper charge exchange. A small contribution of the BI-complex is visible only under n-type doping, when BS-and I0 bind nonetheless the pairing of B with the n-dopants. Also in Ge, the B diffusion mechanism has been fixed, even if to a lower extent, revealing the need of self-interstitials to start the B motion. We evidenced the occurrence of the proton radiation enhanced diffusion (RED) and of the transient enhanced diffusion (TED) of B, modeling both the cases with the central role of Is.
IOP Publishing
Publication date: 
1 Oct 2010

Salvo Mirabella, Davide De Salvador, Elena Bruno, Enrico Napolitani, Giorgia Scapellato, Massimo Mastromatteo, Giuliana Impellizzeri, Gabriele Bisognin, Simona Boninelli, Antonio Terrasi, Alberto Carnera, Francesco Priolo

Biblio References: 
Volume: 33 Issue: 11 Pages: 167
ECS Transactions