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The control of both charge and spin of the electron has become of the utmost relevance in the development of new electronic devices [1]. Many of the most promising developments are based on Magnetic Tunnel Junctions (MTJ)[2]. In these devices, the electric current tunneling across a thin insulating barrier can be controlled by the relative orientation of the two magnetic electrodes, giving rise to the phenomenon of Tunnel Magnetoresistence (TMR). In the quest for high performance MTJ, the spin polarization of the magnetic electrodes is a key parameter to obtain the highest TMR necessary for magnetoelectronic applications, and the use of fully spinpolarized materials (half-metals) has been proposed [3].However the half metallicity of such structures strongly depends on the electrode-barrier interface [4]. Among the few possible candidates suggested for the fabrication of MTJ, epitaxial La0. 67Sr0. 33MnO3/SrTiO3 …
Cambridge University Press
Publication date: 
1 Aug 2008

C Magen, M Varela, SJ Pennycook, Stefano Brivio, Daniela Petti, Matteo Cantoni, Riccardo Bertacco

Biblio References: 
Volume: 14 Issue: S2 Pages: 1392
Microscopy and Microanalysis