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In this work an extended study of the carbonization process of the silicon surface and of a low temperature transition layer in the temperature rump on the 3C-SiC epitaxial growth has been reported. It has been observed that increasing the C/H2 ratio the voids density decreases, the thickness of the carbonization layer and the density increase and the morphology improves. The low temperature transition layer, grown during the ramp between the carbonization step and the real growth process, produce a further reduction of the voids at the 3C-SiC/Si interface and a considerable reduction of the stress of the 3C-SiC film. This stress reduction is related to a large change of the film morphology. No effect of the interface silicon layer on the stress is observed. This study has shown the complex connection between the first steps of the 3C-SiC growth process and the properties of the film in term of stress and superficial …
Publication date: 
1 Sep 2017

R Anzalone, G Litrico, N Piluso, R Reitano, A Alberti, P Fiorenza, S Coffa, F La Via

Biblio References: 
Volume: 473 Pages: 11-19
Journal of Crystal Growth