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In this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor deposition is presented with a focus on growth process optimization for high indium compositions and the structural and tunneling properties of such films. Uniform InGaN/GaN multiple quantum well stacks with indium compositions up to 0.46 were grown with local compositional analysis performed by energy-dispersive X-ray spectroscopy within a scanning transmission electron microscope. Bright room-temperature photoluminescence up to 600 nm was observed for films with indium compositions up to 0.35. To study the tunneling behavior of the InGaN layers, N-polar GaN/In0.35Ga0.65N/GaN tunnel diodes were fabricated which reached a maximum current density of 1.7 kA/cm2 at 5 V reverse bias. Temperature-dependent measurements are presented and confirm tunneling behavior under reverse bias.
AIP Publishing LLC
Publication date: 
14 May 2017

Cory Lund, Brian Romanczyk, Massimo Catalano, Qingxiao Wang, Wenjun Li, Domenic DiGiovanni, Moon J Kim, Patrick Fay, Shuji Nakamura, Steven P DenBaars, Umesh K Mishra, Stacia Keller

Biblio References: 
Volume: 121 Issue: 18 Pages: 185707
Journal of Applied Physics